Power generation of millimeter-wave SiC avalanche transit time oscillator at high temperature

Author

Meng, C.C. ; Liao, G.Z.

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

963

Abstract

For the first time, millimeter-wave SiC (Silicon Carbide) IMPATT oscillator was analyzed at 500 K and 800 K with temperature dependent ionization rates and saturation velocity. The large signal simulations demonstrate the fact that SiC IMPATT devices have efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. The efficiencies (and d.c. power density) at 800 K for depletion widths of 0.25 /spl mu/m (200 GHz), 0.5 /spl mu/m (100 GHz) and 1 /spl mu/m (50 GHz) are 12.4% (6.7 MW/cm/sup 2/), 15% (4.5 MW/cm/sup 2/) and 15.8% (3.3 MW/cm/sup 2/), respectively, for p/sup +/n single-drift flat-profile structures.

Keywords

IMPATT diodes; IMPATT oscillators; circuit analysis computing; digital simulation; millimetre wave oscillators; semiconductor materials; silicon compounds; 0.25 micron; 0.5 micron; 1 micron; 100 GHz; 12.4 percent; 15 percent; 15.8 percent; 200 GHz; 50 GHz; 500 K; 800 K; IMPATT oscillator; SiC; dc power density; depletion widths; large signal simulations; mm-wave avalanche transit time oscillator; p/sup +/n single-drift flat-profile structures; saturation velocity; temperature dependent ionization rates; Charge carrier processes; Electrons; Frequency; Gallium arsenide; Ionization; Oscillators; Power generation; Silicon carbide; Temperature measurement; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602961

Filename

602961