Title :
Active, monolithically integrated coplanar V-band mixer
Author :
Schefer, M. ; Lott, U. ; Benedickter, H. ; Meier, Hp. ; Patrick, W. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Zurich, Switzerland
Abstract :
An active V-band mixer is presented. The device used for mixing is an InP HEMT. The measured maximum mixer conversion gain is 5 dB. This is to the authors´ knowledge the highest reported gain in the mm-wave range for a mixer that does not include a pre-amplifier or IF amplifier.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; S-parameters; active networks; coplanar waveguides; field effect MIMIC; indium compounds; integrated circuit measurement; millimetre wave frequency convertors; millimetre wave mixers; 5 dB; 61 to 71 GHz; InP; InP HEMT; RF transconductance; active monolithically integrated coplanar V-band mixer; double sideband noise figure; first Fourier coefficient; maximum mixer conversion gain; mm-wave range gain; scattering parameters; Equivalent circuits; HEMTs; Indium phosphide; Laboratories; Mixers; Radio frequency; TV; Transconductance; Voltage; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602980
