Title :
19.6% electron-irradiated GaInP/GaAs cells
Author :
Kurtz, Sarah R. ; Bertness, K.A. ; Friedman, D.J. ; Kibbler, A.E. ; Kramer, C. ; Olson, J.M.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm2 Ga0.5In0.5P/GaAs devices irradiated by 1015 cm-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga0.5In0.5 P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; radiation hardening (electronics); semiconductor device testing; semiconductor doping; solar cells; 19.6 percent; 23 percent; Ga0.5In0.5P-GaAs; Ga0.5In0.5P/GaAs solar cells; beginning-of-life; bottom-cell base doping; damage coefficients; device structures; electron irradiation; end-of-life; optimal radiation hardness; semiconductor; top-cell thickness; Doping; Electrons; Gallium arsenide; Indium phosphide; Laboratories; Temperature; Testing; Thickness measurement; Voltage; Zinc;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.521637
