A 43-GHz AlInAs/GaInAs/InP HEMT grid oscillator

Author

Preventza, P. ; Matloubian, M. ; Rutledge, D.B.

Author_Institution

Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

1057

Abstract

A 36-element hybrid grid oscillator has been fabricated. The active devices are InP-based High Electron Mobility Transistors (HEMT´s). The grid oscillates at 43 GHz with an effective radiated power of 200 mW. Measurements show the E and H-plane radiation patterns have side lobes 10 dB below the main beam. These results are a significant improvement over a previous millimeter-wave grid oscillator, which had a divided beam because of substrate modes.

Keywords

HEMT circuits; III-V semiconductors; aluminium compounds; gallium arsenide; hybrid integrated circuits; indium compounds; millimetre wave generation; millimetre wave integrated circuits; millimetre wave oscillators; 200 mW; 36-element hybrid grid oscillator; 43 GHz; AlInAs-GaInAs-InP; E-plane radiation patterns; EHF; H-plane radiation patterns; HEMT grid oscillator; Dielectric substrates; Frequency; HEMTs; Indium phosphide; Laboratories; Millimeter wave technology; Millimeter wave transistors; Oscillators; Phased arrays; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602983

Filename

602983