Title :
A 43-GHz AlInAs/GaInAs/InP HEMT grid oscillator
Author :
Preventza, P. ; Matloubian, M. ; Rutledge, D.B.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 36-element hybrid grid oscillator has been fabricated. The active devices are InP-based High Electron Mobility Transistors (HEMT´s). The grid oscillates at 43 GHz with an effective radiated power of 200 mW. Measurements show the E and H-plane radiation patterns have side lobes 10 dB below the main beam. These results are a significant improvement over a previous millimeter-wave grid oscillator, which had a divided beam because of substrate modes.
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; gallium arsenide; hybrid integrated circuits; indium compounds; millimetre wave generation; millimetre wave integrated circuits; millimetre wave oscillators; 200 mW; 36-element hybrid grid oscillator; 43 GHz; AlInAs-GaInAs-InP; E-plane radiation patterns; EHF; H-plane radiation patterns; HEMT grid oscillator; Dielectric substrates; Frequency; HEMTs; Indium phosphide; Laboratories; Millimeter wave technology; Millimeter wave transistors; Oscillators; Phased arrays; Slabs;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602983
