HBT active antenna as a self oscillating Doppler sensor

Author

Kelly, M.J. ; Stewart, J.A.C. ; Patterson, A.D.

Author_Institution

Merlin Microwave Ltd., Belfast, UK

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

1065

Abstract

This paper investigates the use of Heterojunction Bipolar Transistors (HBTs) as the working device in an active antenna for a self detection system. The devices used here are GaInP-GaAs HBT´s from the GMMT F40 process. The design and performance of an active antenna based on this device is presented. A new large signal model is used to develop the active antenna described in this paper. The element oscillates at 11.40 GHz and produces approximately 5 mW of radiated power. A minimum detectable signal (MDS) of -99 dBm in a 10 Hz bandwidth has been measured.

Keywords

Doppler radar; III-V semiconductors; active antennas; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microstrip antennas; microwave detectors; semiconductor device models; 11.4 GHz; 5 mW; GMMT F40 process; GaInP-GaAs; GaInP-GaAs HBT; HBT active antenna; heterojunction bipolar transistors; large signal model; radar; self oscillating Doppler sensor; Antenna measurements; Circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Microwave devices; Oscillators; Phase noise; Radar detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602985

Filename

602985