DocumentCode :
3119083
Title :
Measuring the span of stress asymmetries on high-precision matched devices
Author :
Tuinhout, H.P. ; Bretveld, A. ; Peters, W.C.M.
Author_Institution :
Philips Res., Eindhoven, Netherlands
fYear :
2004
fDate :
22-25 March 2004
Firstpage :
117
Lastpage :
122
Abstract :
This paper discusses test structures and measurements to answer the question of how far mixed-signal circuit designers (and test structure designers) should keep layout asymmetries away from matched device constructions. Test structures for assessing the span of mechanical stress asymmetries on matched device constructions were designed, fabricated and characterised. The obtained results can be extremely important for small signal analogue electronic circuit designers.
Keywords :
analogue integrated circuits; integrated circuit layout; integrated circuit testing; mixed analogue-digital integrated circuits; stress analysis; analogue integrated circuit building blocks; high-precision matched devices; layout asymmetries; matched device constructions; mechanical stress asymmetries; mixed-signal circuit; mixed-signal integrated circuit; small signal analogue electronic circuit design; test structure; test structures; Circuit testing; Consumer electronics; Electronic equipment testing; Integrated circuit measurements; Microelectronics; Mirrors; Resistors; Semiconductor device testing; Stress measurement; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
Type :
conf
DOI :
10.1109/ICMTS.2004.1309463
Filename :
1309463
Link To Document :
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