Title :
A high-Q in-plane SOI tuning fork gyroscope
Author :
Sharma, Ajit ; Zaman, Faisal M. ; Amini, Babak V. ; Ayazi, Farrokh
Author_Institution :
Integrated MEMS Lab., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents the design and implementation of an in-plane solid-mass single-crystal silicon tuning fork gyro that has the potential of attaining sub-deg/hr rate resolutions. A design is devised to achieve high Q in the drive and sense resonant modes (Qdrive=81,000 and Qsense=64,000) with effective mode decoupling. The gyroscope was fabricated on 40 μm thick silicon-on-insulator (SOI) using a simple two-mask process. The drive and sense resonant modes were balanced electrostatically to within 0.07% of each other and the measured rate results show a sensitivity of 1.25 mV/°/s in a bandwidth of 12 Hz.
Keywords :
gyroscopes; inertial navigation; microsensors; semiconductor device measurement; silicon-on-insulator; vibrational modes; 12 Hz; 40 micron; Si-SiO2; drive modes; electrostatically balanced resonant modes; gyro design; gyroscope; high-Q in-plane SOI tuning fork gyroscope; in-plane solid-mass single-crystal silicon tuning fork gyro; mode decoupling; rate resolutions; sense resonant modes; sensitivity; silicon-on-insulator two-mask process; vibratory micromachined gyroscopes; Acceleration; Electrostatic measurements; Fabrication; Gyroscopes; Laboratories; Micromechanical devices; Resonance; Resonant frequency; Silicon on insulator technology; Vibrations;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426201