Title :
A simple, low resistance contact system for shallow junction p+nn+ InP solar cells that preserves emitter integrity during sintering
Author :
Fatemi, N.S. ; Weizer, V.G. ; Wilt, D.M. ; Hoffman, R.W.
Author_Institution :
Essential Res. Inc., Cleveland, OH, USA
Abstract :
We have discovered what appears to be a unique contact system for use on p-type InP. The new contacts provide low resistance contact to p-InP without the violent metallurgical intermixing that would normally take place between the emitter material and the contact metallization during the contact sintering process. With this new contact system it is possible, for the first time, to make low resistance ohmic contact directly to a shallow junction p/n InP solar cell without destroying the cell in the process. The use of this contact system eliminates the need for an InGaAs cap layer under the metallization, greatly facilitating the use of low cost substrates
Keywords :
III-V semiconductors; indium compounds; ohmic contacts; p-n junctions; semiconductor device metallisation; sintering; solar cells; InP; contact metallization; emitter integrity; low cost substrates; low resistance contact system; ohmic contact; shallow junction p+nn+ InP solar cells; sintering; Contact resistance; Costs; Indium gallium arsenide; Indium phosphide; Metallization; Neural networks; Photovoltaic cells; Substrates; Temperature; Zinc;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.521642
