Title :
An accurate two-dimensional intrinsic capacitance model of short channel MOSFETs
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel charge-based intrinsic capacitance model of short-channel MOSFETs is proposed. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The simulation results clearly show the importance of the field-induced effects. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analogue MOS circuits
Keywords :
VLSI; field effect integrated circuits; insulated gate field effect transistors; semiconductor device models; VLSI; analogue MOS circuits; charge based model; digital MOS circuit; field-induced mobility degradation; semiconductor device model; short channel MOSFETs; short-channel effects; timing calculation; two-dimensional intrinsic capacitance model; velocity saturation; Capacitance; Capacitance-voltage characteristics; Circuit simulation; Integrated circuit modeling; MOS devices; MOSFETs; Predictive models; Solid modeling; Timing; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20857
