Title :
A simple GaAs MESFET model for circuit simulation reflecting the dependence on device geometry and process
Author :
Tarasewicz, S.W.
Author_Institution :
Northern Telecom Electron. Ltd., Ottawa, Ont., Canada
Abstract :
A GaAs MESFET model intended for CAD (computer-aided design) of ICs is developed. As a result of the built-in dependence on device geometry and process, the model can be used to estimate circuit sensitivity to process variations. Theoretical predictions compare well with experimental results. The usefulness of the developed model for circuit design is demonstrated using the examples of typical buffered FET logic circuits
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; semiconductor device models; GaAs; IC CAD; MESFET model; buffered FET logic circuits; circuit simulation; computer-aided design; dependence on device geometry; estimate circuit sensitivity to process variations; experimental results; Analytical models; Circuit simulation; Computational modeling; Design automation; Gallium arsenide; Geometry; Integrated circuit modeling; MESFET circuits; Schottky diodes; Solid modeling;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20858
