DocumentCode :
3119172
Title :
Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus
Author :
Kawamura, Fumio ; Taniguchi, Takashi
Author_Institution :
High Pressure Group, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba, Japan
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.
Keywords :
III-V semiconductors; crystal growth from solution; gallium compounds; high-pressure effects; nanofabrication; nanoparticles; semiconductor growth; wide band gap semiconductors; GaN; Na flux method; belt-type ultra-high pressure apparatus; crystallinity; cubic-GaN nanoparticles; high pressure nitrogen gas; pressure 150 atm; temperature 500 degC; Crystalline materials; Crystallization; Fluorescence; Gallium nitride; Materials science and technology; Nanoparticles; Nickel; Nitrogen; Powders; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516353
Filename :
5516353
Link To Document :
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