Title :
Further study of VTH-mismatch evaluation circuit
Author :
Terada, Kazuo ; Fukeda, Kouhei
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Japan
Abstract :
A new test chip is developed for further studying the test circuit, with which the MOSFET threshold-voltage (VTH) mismatch can easily be evaluated and which is proposed in the previous ICMTS. The data obtained from the test circuits having different design channel width, design channel length, MOSFET number and channel conductivity show reasonable dependency of the VTH-mismatch on those parameters.
Keywords :
Boltzmann equation; MOSFET; capacitance; doping profiles; semiconductor device measurement; semiconductor device testing; Boltzmann constant; DC currents; MOSFET number; MOSFET threshold-voltage mismatch; capacitance ratio; cell numbers; channel conductivity; design channel length; design channel width; dopant fluctuations; mismatch evaluation circuit; test circuit; Circuit testing; Conductivity; Electronic equipment testing; MOSFET circuits; Semiconductor device measurement; Substrates; Switches; Switching circuits; Threshold voltage; Wiring;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309470
