Title :
A unified model for radiation-resistance of advanced space solar cells
Author :
Yamaguchi, Masafumi ; Katsumoto, Shingo ; Amano, Chikara
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
1-MeV electron irradiation effects on MBE-grown InGaAs and AlGaAs solar cells have been examined in comparison with our previous results for radiation damage of InP and GaAs solar cells in order to clarify radiation-resistance of advanced space solar cells. Moreover, 1-MeV electron irradiation results of several space solar cells such as InP, InGaP, InGaAsP, GaAs, AlGaAs, InGaAs, Si, Ge, and CuInSe2 cells have also been analyzed by considering their damage constants, bandgap energies and optical absorption coefficients. We believe that this study will provide a unified model for radiation-resistance of advanced space solar cells
Keywords :
III-V semiconductors; aluminium compounds; electron beam effects; energy gap; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical constants; photovoltaic power systems; semiconductor epitaxial layers; semiconductor growth; solar cells; space vehicle power plants; 1 MeV; AlGaAs; AlGaAs solar cells; CuInSe2; CuInSe2 solar cells; GaAs; GaAs solar cells; Ge; Ge solar cells; InGaAs; InGaAs solar cells; InGaAsP; InGaAsP solar cells; InGaP; InGaP solar cells; InP; InP solar cells; MBE-grown solar cells; Si; Si solar cells; advanced space solar cells; bandgap energies; damage constants; electron irradiation effects; optical absorption coefficients; radiation damage; radiation-resistance; Absorption; Degradation; Electron optics; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Semiconductor process modeling;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.521647
