THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

Author

Gonzalez, T. ; Íñiguez-De-La-Torre, I. ; Pardo, D. ; Song, A.M. ; Mateos, J.

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.

Keywords

Gunn diodes; Gunn oscillators; III-V semiconductors; Monte Carlo methods; gallium compounds; nanoelectronics; terahertz wave devices; terahertz wave generation; wide band gap semiconductors; DC to AC conversion efficiency; GaN; Gunn oscillations; Monte Carlo simulations; THz generation; asymmetric nonlinear planar nanodiodes; channel lengths; fundamental frequencies; oscillation frequencies; second harmonic frequencies; Analytical models; Electromagnetic heating; Fabrication; Frequency conversion; Gallium nitride; Gunn devices; Ohmic contacts; Semiconductor diodes; Semiconductor materials; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516357

Filename

5516357