A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

Author

Matsuda, Toshihiro ; Muramatsu, Akira ; Iwata, Hideyuki ; Ohzone, Takashi ; Yamashita, Kyoji ; Koike, Nono ; Tatsuuma, Ken-ichiro

Author_Institution

Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan

fYear

2004

fDate

22-25 March 2004

Firstpage

173

Lastpage

177

Abstract

A test structure and method for two-dimensional analysis of fabrication process and reliability of MOSFET using a photoemission microscope are presented. Arrays of 20×10(=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array.

Keywords

MOSFET; hot carriers; photoelectron microscopy; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; 2D gate length distributions; MOSFET; characteristics fluctuation; fabrication process; hot-carrier-induced photoemission; intensity fluctuation; nondestructive method; photoemission microscopy; reliability; test structure; two-dimensional analysis; Charge coupled devices; Circuit testing; Electric variables measurement; Fluctuations; Hot carriers; MOSFETs; Optical microscopy; Photoelectricity; Time measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309474

Filename

1309474