A test chip to characterise P-MOS transistors produced using a novel organometallic material

Author

Dicks, M.H. ; Broxton, G.M. ; Thomson, J. ; Lobban, J. ; Gundlach, A.M. ; Stevenson, J.T.M. ; Walton, A.J.

Author_Institution

Sch. of Eng. & Electron., Edinburgh Univ., UK

fYear

2004

fDate

22-25 March 2004

Firstpage

183

Lastpage

187

Abstract

A test chip is reported to characterise MOS transistors with a platinum gate fabricated using a solid organometallic material. Threshold and source-drain characteristics are presented along with oxide leakage measurements. These results are compared with aluminium gate transistors manufactured on the same substrate. Both sets of characteristics are very similar with the major difference being that the platinum gate devices have a lower sub-threshold slope.

Keywords

MOSFET; leakage currents; photodissociation; platinum; semiconductor device measurement; semiconductor device testing; ultraviolet lithography; PMOS transistors; Pt; UV lithography; oxide leakage; patterned platinum layers; photolytic decomposition; platinum gate; semiconductor parameter analyzer; solid organometallic material; source-drain characteristics; test chip; threshold characteristics; Aluminum; Electronic equipment testing; Inorganic materials; MOSFETs; Materials testing; Optical materials; Platinum; Semiconductor device measurement; Solids; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309476

Filename

1309476