Interference effects on room-temperature photoluminescence spectra of GaAs/Ge space solar cells

Author

Timò, G.L. ; Flores, C.

Author_Institution

CISE SpA, Italy

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

2200

Abstract

This paper describes a new method, based on room-temperature photoluminescence (PL), for time-saving and nondestructive characterization of thin emitter GaAs/Ge solar cells used for space power applications. It has been shown that the interference phenomena produced between the PL directly escaping from the surface and the PL reflected from the GaAs/Ge interface can provide information on the doping level, thickness and uniformity of the GaAs structure deposited on Ge substrates. This method can be utilized for the quality control of mass-production of GaAs/Ge solar cells for space power applications

Keywords

III-V semiconductors; aerospace testing; elemental semiconductors; gallium arsenide; germanium; nondestructive testing; photoluminescence; photovoltaic power systems; semiconductor device models; semiconductor device testing; solar cells; space vehicle power plants; GaAs-Ge; doping level; interference phenomena; mass-production; nondestructive characterization; quality control; room-temperature photoluminescence spectra; space power solar cells; substrates; thickness; thin emitter GaAs/Ge solar cells; uniformity; Doping; Epitaxial layers; Gallium arsenide; Interference; Optical devices; Optical refraction; Photoluminescence; Photovoltaic cells; Quality control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.521660

Filename

521660