Development and extraction of high-frequency SPICE models for metal-insulator-metal capacitors

Author

Cai, W.Z. ; Shastri, S.C. ; Azam, M. ; Hoggatt, C. ; Loechelt, G.H. ; Grivna, G.M. ; Wen, Y. ; Dow, S.

Author_Institution

Silicon IC Technol. Dev., ON Semicond. Corp., Phoenix, AZ, USA

fYear

2004

fDate

22-25 March 2004

Firstpage

231

Lastpage

234

Abstract

In the framework of a lumped-element SPICE model, we extract RF parameters for a MIM capacitor, such as series resistance and inductance. The extraction method is validated through a "dummy" MIM capacitor where the dielectric layer is omitted during the fabrication process. A distributed model provides a good fit to measured data; fits to Q(f) and C(f) are replicated using a lumped model as well.

Keywords

MIM devices; S-parameters; SPICE; UHF integrated circuits; capacitance; inductance; lumped parameter networks; thin film capacitors; BiCMOS technology; RF parameters; S-parameter; distributed model; dummy structure; extraction method; high-frequency SPICE models; lumped-element SPICE model; metal-insulator-metal capacitors; normalized capacitance; series inductance; series resistance; Data mining; Dielectric measurements; Electrical resistance measurement; Fabrication; Inductance; MIM capacitors; Parasitic capacitance; Radio frequency; SPICE; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309485

Filename

1309485