DocumentCode :
3119483
Title :
Development and extraction of high-frequency SPICE models for metal-insulator-metal capacitors
Author :
Cai, W.Z. ; Shastri, S.C. ; Azam, M. ; Hoggatt, C. ; Loechelt, G.H. ; Grivna, G.M. ; Wen, Y. ; Dow, S.
Author_Institution :
Silicon IC Technol. Dev., ON Semicond. Corp., Phoenix, AZ, USA
fYear :
2004
fDate :
22-25 March 2004
Firstpage :
231
Lastpage :
234
Abstract :
In the framework of a lumped-element SPICE model, we extract RF parameters for a MIM capacitor, such as series resistance and inductance. The extraction method is validated through a "dummy" MIM capacitor where the dielectric layer is omitted during the fabrication process. A distributed model provides a good fit to measured data; fits to Q(f) and C(f) are replicated using a lumped model as well.
Keywords :
MIM devices; S-parameters; SPICE; UHF integrated circuits; capacitance; inductance; lumped parameter networks; thin film capacitors; BiCMOS technology; RF parameters; S-parameter; distributed model; dummy structure; extraction method; high-frequency SPICE models; lumped-element SPICE model; metal-insulator-metal capacitors; normalized capacitance; series inductance; series resistance; Data mining; Dielectric measurements; Electrical resistance measurement; Fabrication; Inductance; MIM capacitors; Parasitic capacitance; Radio frequency; SPICE; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
Type :
conf
DOI :
10.1109/ICMTS.2004.1309485
Filename :
1309485
Link To Document :
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