Direct extraction methodology for geometry-scalable RF-CMOS models

Author

Voinigescu, Sorin P. ; Tazlauanu, Mihai ; Ho, P.C. ; Yang, M.T.

Author_Institution

ECE Dept., Toronto Univ., Ont., Canada

fYear

2004

fDate

22-25 March 2004

Firstpage

235

Lastpage

240

Abstract

A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below 1 μm and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver.

Keywords

MOSFET; S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; MOS-CML output driver; MOSFET small-signal parameters; S parameters; Y parameter; Z parameter; cutoff frequency degradation; direct extraction methodology; equivalent circuit; geometry-scalable RF-CMOS models; jitter performance; nonquasistatic effects; scalable BSIM3v3 model; single-transistor extraction; Capacitance measurement; Data mining; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency measurement; MOSFET circuits; Radio frequency; Scattering parameters; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309486

Filename

1309486