Title :
Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs
Author :
Klootwijk, J.H. ; Timmering, C.E.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
This paper discusses merits and limitations of CTLM (Circular Transfer Length Method) contact resistance assessment test structures. Requiring just one lithography step, these structures prove to be a simple yet very powerful tool in characterizing and optimizing the contact resistances for III-V based heterojunction bipolar transistors (HBTs).
Keywords :
III-V semiconductors; contact resistance; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device testing; III-V HBT; Pearson product; circular transfer length method; contact resistance assessment test structures; current crowding; mesa transistor; process flow; regression coefficient; Bipolar transistors; Contact resistance; Electrical resistance measurement; Frequency; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Magneto electrical resistivity imaging technique; Semiconductor materials; Testing;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309489
