DocumentCode
3119563
Title
Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs
Author
Klootwijk, J.H. ; Timmering, C.E.
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
fYear
2004
fDate
22-25 March 2004
Firstpage
247
Lastpage
252
Abstract
This paper discusses merits and limitations of CTLM (Circular Transfer Length Method) contact resistance assessment test structures. Requiring just one lithography step, these structures prove to be a simple yet very powerful tool in characterizing and optimizing the contact resistances for III-V based heterojunction bipolar transistors (HBTs).
Keywords
III-V semiconductors; contact resistance; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device testing; III-V HBT; Pearson product; circular transfer length method; contact resistance assessment test structures; current crowding; mesa transistor; process flow; regression coefficient; Bipolar transistors; Contact resistance; Electrical resistance measurement; Frequency; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Magneto electrical resistivity imaging technique; Semiconductor materials; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN
0-7803-8262-5
Type
conf
DOI
10.1109/ICMTS.2004.1309489
Filename
1309489
Link To Document