Title :
Optoelectronic applications of MOS capacitors fabricated on high resistivity silicon
Author :
Malik, O. ; De la Hidalga-W, F.J. ; Meza-P, E.
Author_Institution :
Electron. Dept., Nat. Inst. for Astrophys., Opt. & Electron., Puebla, Mexico
fDate :
Nov. 28 2011-Dec. 1 2011
Abstract :
Optoelectronic applications of MOS capacitors, fabricated on high resistivity silicon substrate, and operating in non-equilibrium mode under a triangular voltage sweep are analyzed. It is found that those MOS capacitors behave as sensitive optical sensors with direct (without analog-digital conversion) quasi-digital output in the form of a pulse-width-modulated signal, duty of which depends on the light intensity. Capacitor-based optical sensors are promising for automatic control, robotic, and metrological applications.
Keywords :
MOS capacitors; elemental semiconductors; optical sensors; optoelectronic devices; silicon; MOS capacitors; automatic control; capacitor-based optical sensors; high resistivity silicon substrate; light intensity; nonequilibrium mode; optoelectronic applications; pulse-width-modulated signal; quasi-digital output; sensitive optical sensors; Capacitors; Logic gates; MOS capacitors; Optical sensors; Radiation effects; Substrates; MOS-capacitor; optical sensor; pulse-width modulation; silicon;
Conference_Titel :
Sensing Technology (ICST), 2011 Fifth International Conference on
Conference_Location :
Palmerston North
Print_ISBN :
978-1-4577-0168-9
DOI :
10.1109/ICSensT.2011.6136993
