Title :
An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs]
Author :
Shimasue, Masanori ; Kawahara, Yasuo ; Sano, Takeshi ; Aoki, Hitoshi
Author_Institution :
MODECH Inc., Tokyo, Japan
Abstract :
Gate-to-bulk overlap capacitance (CGBO) cannot be ignored for long gate channel MOSFETs that are used for various I/O and analog circuits. We present a simple and yet accurate CGBO measurement and extraction by using a group of MOSFETs. Dedicated test structures using 0.18 μm shallow trench isolation technology were fabricated for the purpose. The effect of CGBO has been successfully analyzed by comparing the measured and simulated time period delay of ring oscillators.
Keywords :
MOSFET; capacitance measurement; isolation technology; semiconductor device measurement; semiconductor device models; 0.18 micron; CGBO; I/O circuits; MOSFET test structures; analog circuits; capacitance extraction; capacitance measurement; gate to substrate overlap capacitance; gate-to-bulk overlap capacitance; long gate channel MOSFET; ring oscillator time period delay; shallow trench isolation; Analog circuits; Analytical models; Capacitance measurement; Circuit simulation; Circuit testing; Delay effects; Isolation technology; MOSFETs; Ring oscillators; Time measurement;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309498
