An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs]

Author

Shimasue, Masanori ; Kawahara, Yasuo ; Sano, Takeshi ; Aoki, Hitoshi

Author_Institution

MODECH Inc., Tokyo, Japan

fYear

2004

fDate

22-25 March 2004

Firstpage

293

Lastpage

296

Abstract

Gate-to-bulk overlap capacitance (CGBO) cannot be ignored for long gate channel MOSFETs that are used for various I/O and analog circuits. We present a simple and yet accurate CGBO measurement and extraction by using a group of MOSFETs. Dedicated test structures using 0.18 μm shallow trench isolation technology were fabricated for the purpose. The effect of CGBO has been successfully analyzed by comparing the measured and simulated time period delay of ring oscillators.

Keywords

MOSFET; capacitance measurement; isolation technology; semiconductor device measurement; semiconductor device models; 0.18 micron; CGBO; I/O circuits; MOSFET test structures; analog circuits; capacitance extraction; capacitance measurement; gate to substrate overlap capacitance; gate-to-bulk overlap capacitance; long gate channel MOSFET; ring oscillator time period delay; shallow trench isolation; Analog circuits; Analytical models; Capacitance measurement; Circuit simulation; Circuit testing; Delay effects; Isolation technology; MOSFETs; Ring oscillators; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309498

Filename

1309498