Title :
Scalable high-current density RTDs with low series resistance
Author :
Tchegho, A. ; Muenstermann, B. ; Gutsche, C. ; Poloczek, A. ; Blekker, K. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Solid State Electron. Dept., Univ. of Duisburg-Essen, Essen, Germany
fDate :
May 31 2010-June 4 2010
Abstract :
InP-based double-barrier resonant tunnelling diodes have been optimized for high speed digital circuits. We present the scalability of high current density (JP ≈ 150 kA/cm2;) resonant tunnelling diodes in the sub-micrometer electrode area range. A small signal equivalent circuit has been developed and its parameters are precisely deduced from DC and RF measurements. Based on this model the scalability has been investigated with emphasis on a low but also scalable series resistance in order to keep the peak voltage constant. A comparison of dry and wet etching methods in the device fabrication will be presented. A multiple mesa concept has been adopted to provide reliable scalability at low emitter area (AE <; 1 μm2).
Keywords :
digital circuits; etching; indium compounds; resonant tunnelling diodes; DC measurements; InP; RF measurements; device fabrication; dry etching methods; high speed digital circuits; low series resistance; scalable high-current density double-barrier resonant tunnelling diodes; sub-micrometer electrode area range; wet etching methods; Current density; Digital circuits; Diodes; Electrical resistance measurement; Electrodes; Equivalent circuits; RF signals; Radio frequency; Resonant tunneling devices; Scalability; Resonant tunnelling diodes; high speed logic circuits; modeling; scalability;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516377
