Title :
InP Mach–Zehnder Modulator Platform for 10/40/100/200-Gb/s Operation
Author :
Griffin, R.A. ; Jones, Stephen K. ; Whitbread, Neil ; Heck, Susannah C. ; Langley, Lloyd N.
Author_Institution :
Oclaro plc, Towcester, UK
Abstract :
We describe the design and performance of a wavelength-flexible modulator platform based on multiple quantum well epitaxy on InP. The Mach-Zehnder modulator platform provides high levels of performance in a compact footprint, is suitable for high volume manufacturing, and is compatible with integration of a tunable laser source. Applications spanning 10-, 40-, 100-, and 200-Gb/s transmission are described.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; indium compounds; integrated optoelectronics; laser tuning; semiconductor quantum wells; InP; Mach-Zehnder Modulator Platform; bit rate 10 Gbit/s; bit rate 100 Gbit/s; bit rate 200 Gbit/s; bit rate 40 Gbit/s; quantum well epitaxy; tunable laser source; wavelength flexible modulator platform; Absorption; Electrodes; Electrooptic modulators; Indium phosphide; Quantum well devices; Radio frequency; Optical transmitters; integrated optoelectronics; optoelectronic devices; quadrature amplitude modulation;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2270280
