PMTJ driven STT MRAM with 300mm process

Author

Huai, Y. ; Zhang, J. ; Zhou, Y. ; Wang, X. ; Abedifard, E. ; Wang, Z. ; Hao, X. ; Jung, D. ; Satoh, K. ; Gan, H. ; Yen, B.K. ; Moon, K. ; Chandrashekar, U.

Author_Institution

Avalanche Technol., Fremont, CA, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

We will present high performance/low-cost spin transfer torque magnetic random access memory (STT-MRAM) solution based upon 64Mb chip data and scalable magnetic tunneling junction (MTJ) BEOL integration scheme at 55 nm process node. This is the first fully functional STT-MRAM chip fabricated in a top tier foundry using the standard 300 mm CMOS foundry process. We will characterize pMTJ device population performance and provide in-depth analysis of pMTJ driven STT-MRAM technology extendibility. The manufacturability and various applications of STT-MRAM will also be discussed.

Keywords

CMOS memory circuits; MRAM devices; magnetic tunnelling; magnetoelectronics; chip data; in-depth analysis; pMTJ driven STT MRAM; process node; scalable magnetic tunneling junction BEOL integration scheme; size 300 mm; size 55 nm; spin transfer torque magnetic random access memory; standard CMOS foundry process; top tier foundry; CMOS integrated circuits; Magnetic tunneling; Sociology; Statistics; Temperature measurement; Tunneling magnetoresistance; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7156502

Filename

7156502