Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development

Author

Liau, Geng-Ying ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Ho, Han-Chieh ; Chyi, Jen-Inn ; Ko, Chih-Hsin ; Kuan, Ta-Ming ; Hsieh, Meng-Kuei ; Lee, Wen-Chin ; Wann, Clement H.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In_0.44Ga_0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In_0.44Ga_0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm²/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.

Keywords

aluminium compounds; gallium compounds; gold; high electron mobility transistors; hole mobility; indium compounds; platinum; titanium; AlSb; In_0.44Ga_0.56Sb; Pt-Ti-Pt-Au; Schottky gate metallization processes; antimonide-based heterostructural p-channel HFET epitaxies; hall measurements; molecular beam epitaxy; temperature 293 K to 298 K; Annealing; Epitaxial growth; FETs; Gold; HEMTs; III-V semiconductor materials; MODFETs; Molecular beam epitaxial growth; Semiconductor device manufacture; Transconductance; HFETs; InGaSb; p-channel;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516381

Filename

5516381