A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy

Author

Lee, Jongwon ; Choi, Sunkyu ; Yang, Kyounghoon

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

3

Abstract

A low-power 4:1 multiplexer (MUX) IC using Resonant Tunneling Diodes (RTDs) is proposed and fabricated. The proposed 4:1 MUX topology consists of two RTD-based 2:1 MUX ICs and a 2:1 selector IC. By using the unique NDR (Negative Differential Resistance) characteristics of the RTD, the proposed IC has achieved a significantly reduced dc power consumption compared to the conventional III-V transistor-based topology. The fabricated IC shows 15 Gb/s operation with dc power consumption of 80 mW.

Keywords

III-V semiconductors; MMIC; heterojunction bipolar transistors; indium compounds; multiplexing equipment; network topology; power integrated circuits; resonant tunnelling diodes; 4:1 MUX topology; III-V transistor-based topology; InP RTD-HBT MMIC technology; bit rate 15 Gbit/s; dc power consumption; low-power RTD-based 4:1 multiplexer; negative differential resistance; power 80 mW; resonant tunneling diodes; Circuit topology; Diodes; Energy consumption; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; MMICs; Multiplexing; Resonant tunneling devices; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516385

Filename

5516385