DocumentCode
3120028
Title
Detailed study on anodic bonding process between glass and SiNx deposited silicon substrate and its application on wafer-level AFM probe array integration
Author
Hsieh, Gen Wen ; Tsai, Ching Hsiang ; Lin, Wei Chih ; Liang, Chao Chiun
Author_Institution
Ind. Technol. Res. Inst., Electron. Res. & Service Organ., Hsinchu, Taiwan
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
607
Abstract
The paper reports a detailed study of wafer-level anodic bonding with dielectric intermediate layer and its application to an atomic force microscope (AFM) probe array. First, the bonding performance between sodium-ion rich glass and a silicon nitride deposited silicon substrate was characterized. The effects of surface properties, tool pressure, bonding time, and cleanliness were thoroughly studied. Then, silicon nitride based AFM probe arrays with pyramidal tip and 1.5 micrometer-thick cantilever were successfully bonded and transferred to a Pyrex 7740 glass substrate by use of our optimized wafer-scale anodic bonding condition. The nano-imaging capability of the AFM probe array was also observed.
Keywords
atomic force microscopy; bonding processes; dielectric materials; glass; probes; silicon; silicon compounds; substrates; 1.5 micron; AFM probe array integration; Na; Pyrex 7740 glass substrate; Si; SiN; atomic force microscope probe array; bonding time; cantilever; cleanliness; dielectric intermediate layer; glass; microfabrication; nano-imaging capability; pyramidal tip; silicon nitride deposited silicon substrate; sodium-ion rich glass; surface properties; tool pressure; wafer-level anodic bonding; Atomic force microscopy; Atomic layer deposition; Bonding processes; Dielectric substrates; Glass; Probes; Sensor arrays; Silicon compounds; Wafer bonding; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2004. Proceedings of IEEE
Print_ISBN
0-7803-8692-2
Type
conf
DOI
10.1109/ICSENS.2004.1426239
Filename
1426239
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