Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

Author

Repo, Paivikki ; Haarahiltunen, Antti ; Sainiemi, Lauri ; Yli-Koski, Marko ; Talvitie, Heli ; Schubert, Martin C. ; Savin, Hele

Author_Institution

Sch. of Electr. Eng., Aalto Univ., Aalto, Finland

Volume

3

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

90

Lastpage

94

Abstract

The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response.

Keywords

atomic layer deposition; elemental semiconductors; nanostructured materials; passivation; silicon; vapour deposited coatings; Si; atomic layer coating; atomic layer deposition; black silicon surfaces; charge-carrier transport properties; device operation; effective passivation; high-efficiency solar cells; high-sensitivity light response; highly absorbing silicon nanostructures; light absorption; nanostructured surfaces; photovoltaic application development; reduced reflectance; surface passivation; Aluminum oxide; Etching; Nanostructures; Passivation; Photovoltaic cells; Silicon; Aluminum oxide; atomic layer deposition (ALD); black silicon (b-Si); nanostructures;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2012.2210031

Filename

6264075