Title :
TCAD optimization of field-plated InAlAs-InGaAs HEMTs
Author :
Saguatti, D. ; Chini, A. ; Verzellesi, G. ; Isa, M. Mohamad ; Ian, K.W. ; Missous, M.
Author_Institution :
DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
fDate :
May 31 2010-June 4 2010
Abstract :
High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length and passivation thickness.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; technology CAD (electronics); DC measurements; HEMT; InAlAs-InGaAs; InP; RF measurements; TCAD optimization; optimized field-plate structures; two-dimensional device simulations; Costs; Electric breakdown; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Radio frequency; Solid modeling; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516397
