DocumentCode :
3120214
Title :
Switching magnetic order at an Fe/BaTiO3 interface on and off: Impact on hybrid magnetic-ferroelectric tunnel junctions
Author :
Bertacco, R. ; Radaelli, G. ; Petti, D. ; Plekhanov, E. ; Fina, I. ; Asa, M. ; Baldrati, L. ; Rinaldi, C. ; Cantoni, M. ; Torelli, P. ; Gutierrez, D. ; Panaccione, G. ; Varela, M. ; Picozzi, S. ; Fontcuberta, J.
Author_Institution :
Center LNESS, Politec. di Milano, Como, Italy
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
Interfacial magnetoelectric coupling for electrically altering the magnetization of ferromagnetic electrodes is a viable path to achieve the electrical writing of the magnetic information in spintronic devices. Exploiting the piezoelectric behavior of a ferroelectric material (FE) in contact with a ferromagnetic (FM) thin film, the electric control of the magnetic anisotropies can be achieved. However, strain-mediated methods seems hardly suitable for integration in spintronic devices, where the piezoelectric activity of a FE layer would be inhibited by the growth on a substrate. This is the reason why there is a growing interest towards “purely electric” magnetoelectric effects. For the paradigmatic Fe/BaTiO3 (BTO) system, sizable changes of the interfacial Fe magnetic moment upon reversal of the dielectric polarization of BTO have been predicted, and sizable magneto-electric effects have been observed in nanometric hybrid magnetic-ferroelectric tunneling junctions. Nevertheless, so far a clear understanding of the basic physical mechanisms leading to such a macroscopic effect is still lacking.
Keywords :
barium compounds; dielectric polarisation; ferroelectric materials; ferroelectricity; ferromagnetic materials; interface magnetism; iron; magnetic anisotropy; magnetic moments; magnetic switching; magnetic tunnelling; magnetoelectric effects; metal-insulator boundaries; Fe-BaTiO3; dielectric polarization reversal; electric control; electrical writing; ferroelectric material; ferromagnetic electrodes; ferromagnetic thin film; hybrid magnetic-ferroelectric tunnel junctions; interfacial magnetic moment; interfacial magnetoelectric coupling; magnetic anisotropy; magnetization; piezoelectric behavior; spintronic devices; strain-mediated methods; switching magnetic order; Iron; Junctions; Magnetic switching; Magnetic tunneling; Perpendicular magnetic anisotropy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7156521
Filename :
7156521
Link To Document :
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