Title :
Modulation of magnetization direction in flexible multiferroic heterostructures towards flexible spintronics
Author :
Liu, Y. ; Zhan, Q. ; Wang, B. ; Mao, S. ; Li, R.
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng. (NIMTE), Ningbo, China
Abstract :
The discovery of giant magnetoresistance (GMR) opens the door of spintronics. Recently, GMR and tunneling magnetoresistance (TMR) spintronic devices prepared on flexible substrates, so called flexible spintronics, have attracted a lot of interest due to the mechanical flexibility, light weight, and low cost compared with rigid materials. Controlling the magnetization direction by tuning the magnetic anisotropy is the essential issue for the application of the flexible spintronics. In this talk, flexible FeGa/PVDF multiferroic heterostructures were prepared by magnetron sputtering under different strain. PVDF can supply in-plane uniaxial strain by external strain, electric field, and the change of temperature, which is transferred to the FeGa layer to tune the magnetic anisotropy. Under assistance of small magnetic field, we can well control the magnetization direction in flexible FeGa/PVDF multiferroic heterostructures.
Keywords :
flexible electronics; gallium alloys; interface magnetism; iron alloys; magnetic anisotropy; magnetoelectronics; multiferroics; sputter deposition; FeGa; electric field; external strain; flexible FeGa-PVDF multiferroic heterostructures; flexible spintronics; flexible substrates; giant magnetoresistance; in-plane uniaxial strain; magnetic anisotropy; magnetic field; magnetization direction modulation; magnetron sputtering; mechanical flexibility; temperature change; tunneling magnetoresistance; Electric fields; Magnetic fields; Magnetization; Magnetoelectronics; Perpendicular magnetic anisotropy; Strain;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156524