Title :
An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT
Author :
Lin, Che-Kai ; Lin, Chao-Wei ; Wu, Yi-Chun ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fDate :
May 31 2010-June 4 2010
Abstract :
In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.
Keywords :
III-V semiconductors; composite materials; high electron mobility transistors; indium compounds; optical properties; photodetectors; InAlAs-InGaAs; composite transparent gate; fiber-optic microwave transmission systems; front side optical coupling efficiency; internal photovoltaic gain; metamorphic HEMT; optical characteristics; optoelectronic mixer; photoconductance gain; photodetection mechanism; sputtered ITO/Au/ITO composite films; Gallium arsenide; Gold; Indium compounds; Indium gallium arsenide; Indium tin oxide; Optical coupling; Optical films; Photovoltaic systems; Solar power generation; mHEMTs; Mixer; indium tin oxide; metamorphic high electron mobility transistor; photodetector; phototransistor; photovoltaic effect; responsivity;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516402
