DocumentCode :
3120359
Title :
Technology Directions For Ultra-high-speed SRAMs
Author :
Scott, D. ; Lu, N.C.
Author_Institution :
Texas Instruments
fYear :
1991
fDate :
13-15 Feb. 1991
Firstpage :
78
Lastpage :
79
Keywords :
BiCMOS integrated circuits; CMOS technology; Delay; Energy management; Gallium arsenide; Integrated circuit interconnections; Packaging; Project management; Random access memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-644-6
Type :
conf
DOI :
10.1109/ISSCC.1991.689071
Filename :
689071
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3120359
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