Title :
Study on wavelength distribution of high power laser diode array
Author :
Li, Shen ; Guofeng, Xin ; Zujie, Fang ; Ronghui, Qu
Author_Institution :
Lab. for Inf. Opt., Chinese Acad. of Sci., Shanghai, China
Abstract :
Measured lateral wavelength distribution of LDA is presented, showing typically a V-type feature. Analyses indicate it is induced by bonding stress. A linear distributed stress model is proposed to explain the experimental results.
Keywords :
semiconductor laser arrays; stress effects; bonding stress; high power laser diode array; lateral wavelength distribution; linear distributed stress model; Bonding; Diode lasers; Heat sinks; Linear discriminant analysis; Optical arrays; Sea measurements; Semiconductor laser arrays; Thermal stresses; Tin; Wavelength measurement;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5217098
