High-k dielectrics for use as ISFET gate oxides

Author

van der Wal, P.D. ; Briand, D. ; Mondin, G. ; Jenny, S. ; Jeanneret, S. ; Millon, C. ; Roussel, H. ; Dubourdieu, C. ; de Rooij, N.F.

Author_Institution

Inst. of Microtechnol., Neuchatel Univ., Switzerland

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

677

Abstract

Two binary oxides, Ta₂O₅ and HfO₂, were investigated for use as the pH-sensitive gate oxide of ion-sensitive field-effect transistors (ISFETs). Both materials have been extensively studied as high-k materials for advanced CMOS technologies. They are both deposited by CVD methods, which enable batch processing of several wafers at the same time. After deposition, these materials are thermally annealed, during which step the oxide properties are optimized for use as ISFET gate oxide. The performance of the ISFETs is evaluated by characterization of several parameters including the pH-sensitivity, drift and light sensitivity.

Keywords

annealing; batch processing (industrial); chemical sensors; chemical vapour deposition; dielectric thin films; hafnium compounds; ion sensitive field effect transistors; pH measurement; permittivity; semiconductor device testing; tantalum compounds; CMOS technologies; CVD methods; HfO₂; ISFET gate oxides; Ta₂O₅; batch processing; drift; high-k dielectrics; ion-sensitive field-effect transistors; light sensitivity; optimized oxide properties; pH-sensitive gate oxide; thermally annealed materials; Annealing; CMOS technology; Crystallization; Diodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicon compounds; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426257

Filename

1426257