Title :
An improved process, metrology and methodology for shallow trench isolation etch
Author :
Baum, Chris ; Gaddam, Sreedhar
Author_Institution :
Kilby Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
This paper discusses the development of an improved process for shallow trench isolation (STI) etch, the implementation of scatterometer for metrology and a new methodology for improved STI etch process control and monitoring. Cp/Cpk improvement, reduction in or elimination of process related excursions, higher mean time between clean (MTBC), improved tool availability, improved transistor performance and yield that resulted with the implementation of new process and metrology are reported.
Keywords :
elemental semiconductors; etching; field effect transistors; isolation technology; silicon; statistical process control; thickness measurement; Si; etch process control; improved tool availability; improved transistor performance; metrology; process monitoring; scatterometer; shallow trench isolation etching; Etching; Instruments; Metrology; Monitoring; Optical films; Process control; Resists; Silicon; Strips; Transistors;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309543
