Title :
Method of Fabricating Multiple-Frequency Film Bulk Acoustic Resonators in a Single Chip
Author :
Wang, Li-Peng ; Ginsburg, Eyal ; Diamant, Dora ; Ma, Qing ; Huang, Zhenyu ; Suo, Zhigang
Author_Institution :
Dept. of Microsyst. Technol., Intel Corp., Santa Clara, CA
Abstract :
We report experimental results of a novel approach to integrate multiple-frequency film bulk acoustic resonators (FBAR) in a single chip. An additional tuning layer was deposited and patterned on a conventional Metal/AlN/Metal FBAR film stack. By controlling in-plane dimensions of the periodic tuning patterns, resonance frequencies are modulated according to the corresponding loading percentages. To obtain a desirable frequency response of the modulated resonance peaks (a pure frequency shift), the pitch of the tuning patterns needs to be smaller than the membrane thickness. Three thicknesses of the tuning layers are fabricated to demonstrate different tuning ranges and sensitivities. This approach provides a potential solution to integrate multiple-frequency FBAR filters of adjacent bands by only one additional lithographic patterning step
Keywords :
III-V semiconductors; acoustic resonance; acoustic resonators; aluminium compounds; frequency response; lithography; metal-semiconductor-metal structures; tuning; FBAR filters; acoustic resonator fabrication; frequency response; frequency shift; lithographic patterning step; loading percentage; membrane thickness; metal/AIN/metal FBAR film stack; multiple-frequency film bulk acoustic resonators; periodic tuning patterns; pitch; resonance frequencies; single chip integration; tuning layer; Biomembranes; Electrodes; Film bulk acoustic resonators; Piezoelectric films; Radio frequency; Resonance; Resonant frequency; Resonator filters; Silicon; Tuning;
Conference_Titel :
International Frequency Control Symposium and Exposition, 2006 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
1-4244-0074-0
Electronic_ISBN :
1-4244-0074-0
DOI :
10.1109/FREQ.2006.275489