Title :
Development of high frequency bulk acoustic wave resonator using thinned single-crystal Lithium Niobate
Author :
Gachon, D. ; Lengaigne, G. ; Gauthier-Manuel, L. ; Laude, V. ; Ballandras, S.
Author_Institution :
FEMTO-ST, UMR CNRS-UFC-ENSMM-UTBM, Besancon
Abstract :
Bulk acoustic waves excited in thin piezoelectric films have revealed their capabilities for addressing the problem of high frequency RF filters (above 1 GHz). In this paper, we propose an alternative to thin film deposition consisting in single crystal wafers bonded on a substrate (for instance silicon or glass) and thinned, allowing for plate thickness close to 10 mum. This has been achieved on 3 inches wafers and allows for an accurate selection of the wave characteristics. More, the properties of the piezoelectric material are found conform with tabulated values, enabling one to reliably design any passive signal processing device
Keywords :
acoustic resonators; bulk acoustic wave devices; lithium compounds; piezoelectric materials; thin films; 3 inches; bulk acoustic waves; high frequency RF filters; high frequency bulk acoustic wave resonator; passive signal processing device; piezoelectric material; plate thickness; single crystal wafers; thin film deposition; thin piezoelectric films; thinned single-crystal lithium niobate; Acoustic waves; Glass; Lithium niobate; Piezoelectric films; Radio frequency; Resonator filters; Silicon; Sputtering; Substrates; Wafer bonding;
Conference_Titel :
International Frequency Control Symposium and Exposition, 2006 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
1-4244-0074-0
Electronic_ISBN :
1-4244-0074-0
DOI :
10.1109/FREQ.2006.275492
