• DocumentCode
    3120685
  • Title

    Development of high frequency bulk acoustic wave resonator using thinned single-crystal Lithium Niobate

  • Author

    Gachon, D. ; Lengaigne, G. ; Gauthier-Manuel, L. ; Laude, V. ; Ballandras, S.

  • Author_Institution
    FEMTO-ST, UMR CNRS-UFC-ENSMM-UTBM, Besancon
  • fYear
    2006
  • fDate
    38869
  • Firstpage
    810
  • Lastpage
    812
  • Abstract
    Bulk acoustic waves excited in thin piezoelectric films have revealed their capabilities for addressing the problem of high frequency RF filters (above 1 GHz). In this paper, we propose an alternative to thin film deposition consisting in single crystal wafers bonded on a substrate (for instance silicon or glass) and thinned, allowing for plate thickness close to 10 mum. This has been achieved on 3 inches wafers and allows for an accurate selection of the wave characteristics. More, the properties of the piezoelectric material are found conform with tabulated values, enabling one to reliably design any passive signal processing device
  • Keywords
    acoustic resonators; bulk acoustic wave devices; lithium compounds; piezoelectric materials; thin films; 3 inches; bulk acoustic waves; high frequency RF filters; high frequency bulk acoustic wave resonator; passive signal processing device; piezoelectric material; plate thickness; single crystal wafers; thin film deposition; thin piezoelectric films; thinned single-crystal lithium niobate; Acoustic waves; Glass; Lithium niobate; Piezoelectric films; Radio frequency; Resonator filters; Silicon; Sputtering; Substrates; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Frequency Control Symposium and Exposition, 2006 IEEE
  • Conference_Location
    Miami, FL
  • Print_ISBN
    1-4244-0074-0
  • Electronic_ISBN
    1-4244-0074-0
  • Type

    conf

  • DOI
    10.1109/FREQ.2006.275492
  • Filename
    4053870