• DocumentCode
    3120703
  • Title

    Integration of SiGe MEMS resonators with CMOS: Shifting system level paradigms in frequency control

  • Author

    Quevy, Emmanuel P.

  • Author_Institution
    Silicon Clocks Inc., Fremont, CA
  • fYear
    2006
  • fDate
    38869
  • Firstpage
    813
  • Lastpage
    813
  • Abstract
    This invited paper reviews recent progress about Silicon Germanium Technology for the integration of MEMS resonators with CMOS electronics and its application to frequency generation. Topics include process issues, device performances, and system level advantages brought by monolithic integration
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; frequency control; micromechanical resonators; monolithic integrated circuits; CMOS integration; SiGe MEMS resonators; device performances; frequency control; monolithic integration; silicon germanium technology; system level paradigms; CMOS technology; Frequency control; Germanium silicon alloys; Micromechanical devices; Monolithic integrated circuits; Oscillators; Radio frequency; Resonator filters; Silicon germanium; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Frequency Control Symposium and Exposition, 2006 IEEE
  • Conference_Location
    Miami, FL
  • Print_ISBN
    1-4244-0074-0
  • Electronic_ISBN
    1-4244-0074-0
  • Type

    conf

  • DOI
    10.1109/FREQ.2006.275493
  • Filename
    4053871