Title :
Study of Pt/TiO2/SiC Schottky diode based gas sensor
Author :
Kandasamy, S. ; Trinchi, A. ; Wlodarski, W. ; Comini, E. ; Sberveglieri, G.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia
Abstract :
Metal reactive oxide silicon carbide (MROSiC) is attractive for gas sensing applications in harsh, high temperature environments. We present the hydrogen and propene gas sensing performance of a Pt/TiO2/SiC device. This sensor has been employed as a Schottky diode, and is capable of operating at temperatures around 650 °C. The sensors were exposed to different concentrations of these analyte gases over the temperature range of 300 to 650 °C. The response was measured as the shift in voltage when a constant forward bias current 0.5 mA was applied. Voltage shifts of approximately 4.5 V for 1% hydrogen in nitrogen and up to 1 V for 1% hydrogen in synthetic air were observed. Largest responses were observed at operating temperature of 530 °C.
Keywords :
Schottky diodes; gas sensors; hydrogen; platinum; silicon compounds; titanium compounds; 0.5 mA; 300 to 650 C; Pt-TiO2-SiC; high temperature environments; hydrogen gas sensor; metal reactive oxide silicon carbide; platinum titanium dioxide silicon carbide Schottky diode; propene gas sensor; Gas detectors; Gases; Hydrogen; Metal-insulator structures; Polarization; Schottky diodes; Semiconductivity; Silicon carbide; Temperature sensors; Voltage;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426273
