DocumentCode :
3120801
Title :
Nickel Vibrating Micromechanical Disk Resonator with Solid Dielectric Capacitive-Transducer Gap
Author :
Huang, Wen-Lung ; Ren, Zeying ; Nguyen, Clark T -C
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fYear :
2006
fDate :
38869
Firstpage :
839
Lastpage :
847
Abstract :
A MEMS-based vibrating disk resonator fabricated in a low temperature nickel metal material and using a 30-nm nitride dielectric capacitive transducer has been demonstrated at frequencies approaching 60 MHz with Q´s as high as 54,507, which is the highest to date for any micro-scale metal resonator in the VHF range. The frequency-Q product of 3.3times1012 achieved by this device is three orders of magnitude higher than the 1.1times109 of previous nickel micromechanical resonators. The degree of isolation afforded by its supports strongly governs the achievable Q´s of this device, which vary from 490 when a 2 mum-radius supporting stem is used, to 54,507 when no stem is used, clearly indicating an anchor dominated loss mechanism, but more importantly indicating that nickel´s intrinsic material Q is quite high at VHF. Furthermore, because its highest process temperature is 380degC, and there are paths to an even lower temperature ceiling (e.g., 100degC), the fabrication process for nickel disks is amenable to post-processing over finished foundry CMOS wafers, even those using advanced low-k dielectrics around copper metallization. Nickel material thus presents an intriguing path towards a complete communication transceiver (including all high Q passives) on a chip
Keywords :
CMOS integrated circuits; capacitive sensors; copper; dielectric devices; metallisation; microcavities; micromechanical resonators; microsensors; nickel; 2 micron; 30 nm; 380 C; 60 MHz; CMOS wafers; Cu; MEMS; Ni; copper metallization; frequency-Q product; low-k dielectrics; micromechanical disk resonator; microscale metal resonator; nickel disks; nickel metal material; nickel vibrating disk resonator; solid dielectric capacitive-transducer gap; Dielectric materials; Fabrication; Foundries; Frequency; Inorganic materials; Micromechanical devices; Nickel; Solids; Temperature distribution; Transducers; MEMS; capacitive transducer; charge bias; integration; micromechanical resonator; nickel; quality factor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International Frequency Control Symposium and Exposition, 2006 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
1-4244-0074-0
Electronic_ISBN :
1-4244-0074-0
Type :
conf
DOI :
10.1109/FREQ.2006.275499
Filename :
4053877
Link To Document :
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