DocumentCode :
3120989
Title :
Detection of explosive vapors using organic thin-film transistors
Author :
Bentes, E. ; Gomes, H.L. ; Stallinga, P. ; Moura, L.
Author_Institution :
Fac. of Sci. & Technol., Univ. do Algarve, Faro, Portugal
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
766
Abstract :
Field effect transistors (FETs) based on organic materials were investigated as sensors for detecting 2,4,6-trinitrotoluene (TNT) vapors. Several FET devices were fabricated using two types of semiconducting organic materials, solution processed polymers deposited by spin coating and, oligomers (or small molecules) deposited by vacuum sublimation. When vapors of nitroaromatic compounds bind to thin films of organic materials which form the transistor channel, the conductivity of the thin film increases and changes the transistor electrical characteristic. The use of the amplifying properties of the transistor represents a major advantage over conventional techniques based on simple changes of resistance in polymers frequently used in electronic noses.
Keywords :
chemical hazards; electrical conductivity; explosions; gas sensors; health hazards; organic semiconductors; polymer films; sublimation; thin film transistors; 2,4,6-trinitrotoluene vapors; FET devices; TNT; electronic noses; explosive vapor detection; field effect transistors; nitroaromatic compounds; oligomers; organic materials; organic thin-film transistors; semiconducting organic materials; solution processed polymers; spin coating; thin film conductivity; transistor amplifying properties; transistor channel; transistor electrical characteristic; vacuum sublimation; Coatings; Conductivity; Explosives; FETs; Organic materials; Organic thin film transistors; Polymer films; Semiconductivity; Semiconductor thin films; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
Type :
conf
DOI :
10.1109/ICSENS.2004.1426281
Filename :
1426281
Link To Document :
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