Title :
Millisecond response time measurements of high temperature gas sensors
Author :
Tobias, Peter ; Hu, Hui ; Koochesfahani, Manooch ; Ghosh, Ruby N.
Author_Institution :
Center for Sensor Mater., Michigan State Univ., East Lansing, MI, USA
Abstract :
We present a new apparatus for measuring the response times of a gas sensor with millisecond resolution, while also capturing the slower components of the response such as the steady state value. Laser induced fluorescence (LIF) imaging was used to quantify the exchange rate of the sensor´s ambient gas. The millisecond response of high temperature (up to 950 K) field effect SiC sensors for detection of hydrogen containing gases was characterized.
Keywords :
electric sensing devices; fluorescence; gas sensors; high-temperature electronics; ion sensitive field effect transistors; laser beam effects; semiconductor device measurement; semiconductor materials; signal resolution; silicon compounds; 950 K; SiC; field effect SiC sensors; gas sensor resolution; high temperature gas sensors; hydrogen containing gases; laser induced fluorescence imaging; response time measurements; sensor ambient gas exchange rate; slower response components; Delay; Exchange rates; Fluorescence; Gas detectors; Gas lasers; High-resolution imaging; Steady-state; Temperature measurement; Temperature sensors; Time measurement;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426282
