Title :
Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition
Author :
Horiike, Takafumi ; Hamada, Seiti ; Uno, Tomohiro ; Machida, Hideaki ; Ishikawa, Masato ; Sudo, Hiroshi ; Ohshita, Yoshio ; Ogura, Atsushi
Author_Institution :
Sch. of Sci. & Technol., Meiji Univ., Kawasaki, Japan
Abstract :
This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge2Sb2Te5 by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.
Keywords :
antimony alloys; chalcogenide glasses; chemical vapour deposition; germanium alloys; phase change memories; tellurium alloys; GexSbyTez; PCRAM application; back end of line memory application; chemical vapor deposition; composition control; deposition conditions; film composition; high aspect hole; phase change memory; Atmosphere; Cavity resonators; Films; Interference; Phase change random access memory; Scanning electron microscopy; Substrates; CVD; GeSbTe; PCRAM;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137082
