DocumentCode
3121412
Title
Production implementation of state-of-the-art electron beam inspection
Author
Ache, Alexander ; Wu, Kevin
Author_Institution
IBM Microelectron., East Fishkill, NY, USA
fYear
2004
fDate
4-6 May 2004
Firstpage
344
Lastpage
347
Abstract
Electron beam inspection (EBI), through the use of voltage contrast, is used extensively throughout the industry to identify in-line electrical failures. The inspection methodologies presented in this paper help us to understand and react to these buried yield detractors in a timely manner. The result is an increase in disposition efficiency and a decrease in mean time-to-detect. This paper will describe the implementation of a state-of-the-art EBI technology into 300 mm wafer manufacturing using the KLA-Tencor eS30 EBI tool. First, results will be shown to demonstrate sensitivity, throughput, and overall production worthiness. Next, we will describe the implementation of this technology into IBM´s 300 mm production line. Finally, we will describe a case study that illustrates the value of this technique for monitoring electrical defectivity in volume production.
Keywords
electron beam testing; fault location; inspection; integrated circuit manufacture; optimisation; wafer-scale integration; 300 mm; IBM´s 300 mm production line; KLA-Tencor eS30 EBI tool; electrical defect monitoring; electron beam inspection; inline electrical failures; mean time-to-detect; production implementation; state-of-the-art technology; throughput optimisation; voltage contrast; wafer manufacturing; Design optimization; Electron beams; Energy management; Floods; Inspection; Monitoring; Production; Surface charging; Throughput; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN
0-7803-8312-5
Type
conf
DOI
10.1109/ASMC.2004.1309594
Filename
1309594
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