In-line metrology methods for manufacturing control of BiCMOS films

Author

Printy, Craig

Author_Institution

Unit Process Dev., Nat. Semicond., South Portland, ME, USA

fYear

2004

fDate

4-6 May 2004

Firstpage

348

Lastpage

354

Abstract

This paper describes the methodologies used for manufacturing control of BiCMOS layer processing in the ASM Epsilon reactor at National Semiconductors 200 mm wafer fab in South Portland Maine. Real time monitoring techniques have been developed to control collector epi slip, SiGe layer thickness, Ge concentration and As concentration. These monitors provide objective and low cost monitoring for epi manufacturing processes.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; arsenic; industrial control; integrated circuit manufacture; process control; semiconductor materials; semiconductor thin films; 200 mm; ASM Epsilon reactor; As concentration; BiCMOS layer processing; Ge concentration; SiGe layer thickness; SiGe:As; control collector epi slip; epi manufacturing processes; inline metrology methods; low cost monitoring; manufacturing control; real time monitoring technique; wafer fab; BiCMOS integrated circuits; Inductors; Manufacturing processes; Metrology; Monitoring; Pulp manufacturing; Semiconductor device manufacture; Semiconductor films; Silicon germanium; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop

Print_ISBN

0-7803-8312-5

Type

conf

DOI

10.1109/ASMC.2004.1309595

Filename

1309595