Title :
In-line metrology methods for manufacturing control of BiCMOS films
Author_Institution :
Unit Process Dev., Nat. Semicond., South Portland, ME, USA
Abstract :
This paper describes the methodologies used for manufacturing control of BiCMOS layer processing in the ASM Epsilon reactor at National Semiconductors 200 mm wafer fab in South Portland Maine. Real time monitoring techniques have been developed to control collector epi slip, SiGe layer thickness, Ge concentration and As concentration. These monitors provide objective and low cost monitoring for epi manufacturing processes.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; arsenic; industrial control; integrated circuit manufacture; process control; semiconductor materials; semiconductor thin films; 200 mm; ASM Epsilon reactor; As concentration; BiCMOS layer processing; Ge concentration; SiGe layer thickness; SiGe:As; control collector epi slip; epi manufacturing processes; inline metrology methods; low cost monitoring; manufacturing control; real time monitoring technique; wafer fab; BiCMOS integrated circuits; Inductors; Manufacturing processes; Metrology; Monitoring; Pulp manufacturing; Semiconductor device manufacture; Semiconductor films; Silicon germanium; Thickness control;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309595
