Device model of phase change memory

Author

Gong, Yuefeng ; Rao, Feng ; Song, Zhitang

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

Phase change memory (PCM) is considered to be one of the best candidates for next-generation non-volatile memories. A three-dimension finite element model for PCM is established to simulate electric, thermal, stress and phase state distribution during RESET and SET operation. The impact of thermal on device cell design and optimization is investigated. The simulation results have been used as a guideline of the optimum design for low power consumption and high speed.

Keywords

circuit optimisation; finite element analysis; integrated circuit design; integrated circuit modelling; phase change memories; random-access storage; RESET operation; SET operation; device cell design; device model; low power consumption; next-generation nonvolatile memories; phase change memory; phase state distribution; three-dimension finite element model; Buffer layers; Conductivity; Finite element methods; Heating; Resistance; Thermal conductivity; Finite Element Method; modeling; phase change memory; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137085

Filename

6137085