Title :
Single-gated multiple-mode power semiconductor devices
Author :
Stark, Bernard H. ; Palmer, Patrick R.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour
Keywords :
insulated gate bipolar transistors; IGBT switching; operation transitions triggering; power semiconductor device design; single-gated multiple-mode power semiconductor devices; switching control; thyristor on-state characteristics;
Conference_Titel :
Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19990594
