• DocumentCode
    3121590
  • Title

    Design and fabrication of breakover diode with improved parameter control

  • Author

    Hayes, J.M. ; Leveugle, C. ; Walsh, P.R. ; Murray, A.F.J. ; Lane, W.A.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    42491
  • Lastpage
    42494
  • Abstract
    In this work, a novel breakover diode (BOD) design has been proposed and developed allowing the generation of a range of triggering voltages (20-300 V) independent of the starting material´s resistivity, through modification of a single process step. Moreover, absolute control over the triggering (forward blocking) voltage (VBF) has been improved to approximately ±1.5%. In addition, the dependence of other critical device parameters, such as the breakover voltage (VBO), breakover current (IBO) and holding current (Ih), on the forward blocking voltage has been virtually eliminated
  • Keywords
    power semiconductor diodes; 20 to 300 V; breakover current; breakover diode; breakover voltage; critical device parameters; design; fabrication; forward blocking voltage; holding current; parameter control improvement; triggering voltages generation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19990595
  • Filename
    789938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3121590